Ultra-Flat Silicon Wafers

These ultra-flat wafers can be used for substrate studies or as substrate for AFM and SEM samples by cleaving the wafer.

Available Options:

Description

Specifications

4″ 6″ 8″
Material: Silicon Silicon Silicon
Diameter: 100 mm 150 mm 200 mm
Orientation: <100> <100> <100>
Type/Dopant: P/Boron P/Boron P/Boron
Grade: Prime/CZ Virgin Prime/CZ Virgin Prime/CZ Virgin
Growth Method: CZ CZ CZ
Resistivity: 10-20 Ohm-cm 10-20 Ohm-cm 10-20 Ohm-cm
Thickness: 525µm ±20µm 675µm ±20µm 725µm ±20µm
TTV: <4.00µm <4.00µm <4.00µm
SFPD: <2.0µm <2.0µm <2.0µm
Warp: ≤30µm ≤30µm ≤30µm
Bow: ≤30µm ≤30µm ≤30µm
Particles: ≤20@≥0.3µm ≤20@≥0.3µm ≤20@≥0.3µm
Front Surface: Polished Polished Polished
Back Surface: Etched Etched Etched
Flat: 2 per SEMI Standard 1 per SEMI Standard 2 per SEMI Standard
Site Flatness: <2.0µm <2.0µm <2.0µm
Roughness: Typically 2-3Å Typically 2-3Å Typically 2-3Å

 

Additional information

Unit

each, each

Reviews

There are no reviews yet.

Be the first to review “Ultra-Flat Silicon Wafers”

Your email address will not be published.

0

Your Cart