Description
Spécifications
| 1« | 2« | 3« | 4« | 6« | |
| Material: | Silicon | Silicon | Silicon | Silicon | Silicon |
| Diameter: | 25 mm | 50 mm | 76 mm | 100 mm | 150 mm |
| Orientation: | <100> | <100> | <111> | <100> | <100> |
| Resistance : | 1-30 Ohms | 1-30 Ohms | 1-30 Ohms | 1-30 Ohms | 1-30 Ohms |
| Type P: | Boron – 1 primary flat | Boron – 1 primary flat | Boron – 1 primary flat | Boron – 1 primary flat | Boron – 1 primary flat |
| SiO2 top coating: | None | None | None | None | None |
| Wafer Thickness: | 10-12 mill (254-304µm) |
9-13 mill (230-330µm) |
13.6-18.5 mill (345-470µm) |
18.7-22.6 mill (475-575µm) |
23.6-25.2 mill (600-690µm) |
| Roughness: | 2nm | 2nm | 2nm | 2nm | 2nm |
| TTV: | <20µm | ||||
| Polished: | on one side | on one side | on one side | on one side | on one side |








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