Silicon Wafers Type P

These silicon wafers can be used for substrate studies or as substrate for AFM and SEM samples by cleaving the wafer.

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Description

Spécifications

1 2 3 4 6
Material: Silicon Silicon Silicon Silicon Silicon
Diameter: 25 mm 50 mm 76 mm 100 mm 150 mm
Orientation: <100> <100> <111> <100> <100>
Resistance : 1-30 Ohms 1-30 Ohms 1-30 Ohms 1-30 Ohms 1-30 Ohms
Type P: Boron – 1 primary flat Boron – 1 primary flat Boron – 1 primary flat Boron – 1 primary flat Boron – 1 primary flat
SiO2 top coating: None None None None None
Wafer Thickness: 10-12 mill
(254-304µm)
9-13 mill
(230-330µm)
13.6-18.5 mill
(345-470µm)
18.7-22.6 mill
(475-575µm)
23.6-25.2 mill
(600-690µm)
Roughness: 2nm 2nm 2nm 2nm 2nm
TTV: <20µm  
Polished: on one side on one side on one side on one side on one side

 

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